 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2MBI200S-120 1200V / 200A 2 in one-package Features * High speed switching * Voltage drive * Low inductance module structure IGBT Module Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Symbol VCES VGES Tc=25C IC Tc=80C Tc=25C IC pulse Tc=80C -IC -IC pulse PC Tj Tstg Vis Mounting *2 Terminals *2 Rating 1200 20 300 200 600 400 200 400 1500 +150 -40 to +125 AC 2500 (1min. ) 3.5 4.5 Unit V V A A A A A A W C C V N*m N*m Equivalent Circuit Schematic C2E1 C1 E2 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage *1 Screw torque G1 E1 G2 E2 *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : Mounting 2.5 to 3.5 N*m(M5 or M6) Terminals 3.5 to 4.5 N*m(M6) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. Max. - - 1.0 - - 0.4 5.5 7.2 8.5 - 2.3 2.6 - 2.8 - - 24000 - - 5000 - - 4400 - - 0.35 1.2 - 0.25 0.6 - 0.1 - - 0.45 1.0 - 0.08 0.3 - 2.3 3.0 - 2.0 - - - 0.35 Characteristics Min. Typ. - - - - - 0.025 Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=200mA Tc=25 C VGE=15V, IC=200A Tc=125C VGE=0V VCE=10V f=1MHz VCC=600V IC=200A VGE=15V RG=4.7 ohm Tj=25C Tj=125C IF=200A IF=200A, VGE=0V Unit mA A V V pF s Turn-off time Forward on voltage Reverse recovery time V s Thermal resistance characteristics Item Thermal resistance Conditions Max. 0.085 IGBT 0.18 Diode the base to cooling fin - C/W C/W C/W Unit *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 2MBI200S-120 Characteristics (Representative) Collector current vs. Collector-Emiiter voltage Tj= 25C (typ.) 500 500 IGBT Module Collector current vs. Collector-Emiiter voltage Tj= 125C (typ.) VGE= 20V15V 12V 400 400 VGE= 20V 15V 12V Collector current : Ic [ A ] 300 10V Collector current : Ic [ A ] 300 10V 200 200 100 100 8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 500 10 Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) Tj= 25C 400 Tj= 125C 300 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 200 4 Ic= 400A 2 Ic= 200A Ic=100A 100 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 100000 1000 Dynamic Gate charge (typ.) Vcc=600V, Ic=200A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 Cies 600 15 10000 5000 400 10 Coes Cres 1000 200 5 500 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 500 1000 Gate charge : Qg [ nC ] 1500 0 2000 Gate - Emitter voltage : VGE [ V ] 2MBI200S-120 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 4.7ohm, Tj= 25C 1000 1000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 4.7ohm, Tj= 125C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr tf 100 100 tf 50 0 100 200 300 Collector current : Ic [ A ] 50 0 100 200 300 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=15V, Tj= 25C 5000 ton 60 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=4.7ohm Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff Switching time : ton, tr, toff, tf [ nsec ] tr Eon(125C) 1000 40 Eon(25C) 500 Eoff(125C) 20 Eoff(25C) Err(125C) 100 tf Err(25C) 50 1 10 Gate resistance : Rg [ohm] 100 0 0 100 200 Collector current : Ic [ A ] 300 400 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=15V, Tj= 125C 160 450 400 Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>4.7ohm, Tj=<125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 120 350 Collector current : Ic [ A ] Eoff Err 1 10 Gate resistance : Rg [ohm] 100 300 250 200 150 100 50 80 40 0 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] 2MBI200S-120 IGBT Module Forward current vs. Forward on voltage (typ.) 500 500 Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=4.7ohm Tj=125C 400 Tj=25C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Irr(125C) trr(125C) 100 Irr(25C) trr(25C) Forward current : IF [ A ] 300 200 100 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 100 200 300 Forward current : IF [ A ] Transient thermal resistance 1 Thermal resistanse : Rth(j-c) [ C/W ] FWD 0.1 0.05 IGBT 0.01 1E-3 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] Outline Drawings, mm mass : 370g |
Price & Availability of 2MBI200S-120
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |